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 2SA1931
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
Unit: mm * * * Low saturation voltage: VCE (sat) = -0.4 V (max) High-speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC4881
Absolute Maximum Ratings (Tc = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -50 -7 -5 -1 2.0 20 150 -55 to 150 Unit V V V A A W C C
JEDEC JEITA
SC-67
TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2006-11-13
2SA1931
Electrical Characteristics (Tc = 25C)
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Test Conditions VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -1 V, IC = 1 A VCE = -1 V, IC = -3 A IC = -2 A, IB = -0.2 A IC = -2 A, IB = -0.2 A VCB = -1 V, IC = -1 A VCB = -10 V, IE = 0, f = 1 MHz IB2 IB1 Output 10 Min -50 100 60 Typ. -0.2 -0.9 60 100 0.1 Max -1 -1 300 -0.4 -1.5 V V MHz pF Unit A A V
20 s IB1
Input IB2
Switching time
Storage time
tstg
VCC = -30 V
1.0
s
-IB1 = IB2 = 0.15 A, duty cycle 1% Fall time tf 0.1
Marking
A1931
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2006-11-13
2SA1931
IC - VCE
-10 Common emitter Tc = 25C -100 -90 -80 -70 -60 -6 -50 -40 -4 -30 -20 -2 -8 Common emitter
IC - VBE
(A)
(A)
-8
VCE = -1 V -6
IC
Collector current
Collector current
IC
-4
Tc = 100C 25
-2
-25
IB = -10 mA
0 0
-2
-4
-6
-8
-10
0 0
-0.4
-0.8
-1.2
-1.6
-2.0
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE
(V)
hFE - IC
-10 500 -5 -3 Common emitter IC/IB = 20
VCE (sat) - IC
300
25 -25
Collector-emitter saturation voltage VCE (sat) (V)
DC current gain
hFE
Tc = 100C
100 50 30 Common emitter VCE = -1 V 10 -0.03 -0.1 -0.3 -1 -3 -10
-1 -0.5 -0.3
-0.1 -0.05 -0.03
Tc = 100C
Collector current
IC
(A)
25 -25
-0.01 -0.01
-0.03
-0.1
-0.3
-1
-3
-10
Collector current
IC
(A)
Safe operating area
-10
(A)
VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V)
-5 -3
-5 -3
IC max (Pulse)* IC max (Continuous)
1 ms* 10 ms* 100 ms*
IC
-1 -0.5 -0.3 *: Single non-repetitive pulse Tc = 25C -0.1 -0.05 -0.3 -0.5 -1 -3 -5 -10 -0.03 -0.1 Curves must be de-rated linearly -0.3 with increase -1 in -3 temperature.
-1 -0.5 -0.3
-25
Tc = 100C
25
-0.1 -0.03
Common emitter IC/IB = 20 -0.1
Collector current
DC operation Tc = 25C
VCEO max -10 -30 -100
Collector current
IC
(A)
Collector-emitter voltage
VCE (V)
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2006-11-13
2SA1931
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
4
2006-11-13


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